Insights into the off-state breakdown mechanisms in power GaN HEMTs
نویسندگان
چکیده
منابع مشابه
OFF-state TDDB in High-Voltage GaN MIS-HEMTs
We have investigated time-dependent dielectric breakdown (TDDB) in high-voltage AlGaN/GaN MetalInsulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) biased in the OFF state. This is an important reliability concern that has been overlooked. Towards this goal, we have developed a novel methodology using ultraviolet light that allows us to separate the permanent effects of dielec...
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2019
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2019.06.066